Power-side-channel analysis of carbon nanotube FET based design

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Chandra K. H. Suresh, Bodhisatwa Mazumdar, Sk Subidh Ali and Ozgur Sinanoglu

Continuous scaling of CMOS technology beyond sub-nanometer region has aggravated short-channel effects, resulting in increased leakage current and high power densities. Furthermore, elevated leakage current and power density render CMOS based security-critical applications vulnerable to power-side-channel attacks. Carbon Nanotubes (CNT) is a promising alternative to CMOS technology.